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this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 1 en29lv160b rev. i, issue date: 2011 / 10 / 26 purpose eon silicon solution inc. (hereinafter called ?eon?) is going to provide its products? top marking on ics with < cfeon > from january 1st, 2009, and without any change of the part number and the compositions of the ics. eon is still keeping the promise of q uality for all the products with the same as that of eon delivered before. please be advised with the change and appreciate your kindly cooperation and fully support eon?s product family. eon products? new top marking cfeon top marking example: continuity of specifications there is no change to this data sheet as a result of offering the device as an eon product. any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary, where supporte d. future routine revi sions will occur when appropriate, and chan ges will be noted in a revision summary. continuity of ordering part numbers eon continues to support existing part numbers beginning with ?eon? and ?cfeon? top marking. to order these products, during the transition please specify ?eon top marking? or ?cfeon top marking? on your purchasing orders. for more information please contact your local sales office for additional information about eon memory solutions. cfeon part number: xxxx-xxx lot number: xxxxx date code: xxxxx
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 2 en29lv160b rev. i, issue date: 2011 / 10 / 26 features ? 3.0v, single power supply operation - minimizes system level power requirements ? high performance - access times as fast as 70 ns ? low power consumption (typical values at 5 mhz) - 9 ma typical active read current - 20 ma typical program/erase current - less than 1 a standby current ? flexible sector architecture: - one 16-kbyte, two 8-kbyte, one 32-kbyte, and thirty-one 64-kbyte sectors (byte mode) - one 8-kword, two 4-kword, one 16-kword and thirty-one 32-kword sectors (word mode) ? sector protection : - hardware lo cking of sectors to prevent program or erase operations within individual sectors - additionally, temporary sector group unprotect allows code changes in previously locked sectors. ? high performance program/erase speed - byte/word program time: 8s typical - sector erase time: 100ms typical - chip erase time: 4s typical ? jedec standard program and erase commands ? jedec standard data # polling and toggle bits feature ? single sector and chip erase ? sector unprotect mode ? embedded erase and program algorithms ? erase suspend / resume modes: read and program another sector during erase suspend mode ? triple-metal double-poly triple-well cmos flash technology ? low vcc write inhibit < 2.5v ? minimum 100k program/erase endurance cycle ? package options - 48-pin tsop (type 1) - 48 ball 6mm x 8mm tfbga ? industrial temperature range general description the en29lv160b is a 16-megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. any byte can be programmed typically in 8s. the en29lv160b features 3.0v voltage read and write operation, with access times as fast as 70ns to eliminate the need for wait states in high-performance microprocessor systems. the en29lv160b has separate output enable (oe#), chip enable (ce#), and write enable (we#) controls, which eliminate bus contention issues. this device is designed to allow either single sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. the device can sustain a minimum of 100k program/erase cycles on each sector. en29lv160b 16 megabit (2048k x 8-bit / 1024k x 16-bit) flash memory boot sector flash memory, cmos 3.0 volt-only
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 3 en29lv160b rev. i, issue date: 2011 / 10 / 26 connection diagrams 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 a15 a14 a13 a12 a11 a10 a9 a8 a19 nc we# reset# nc nc ry/by# a18 a17 a7 a6 a5 a4 a3 a2 a1 a16 byte# vss dq15/a-1 dq7 dq14 dq6 dq13 dq5 dq12 dq4 vcc dq11 dq3 dq10 dq2 dq9 dq1 dq8 dq0 oe# vss ce# a0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 standard tsop
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 4 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 1. pin description figure 1. logic diagram pin name function a0-a19 20 addresses dq0-dq14 15 data inputs/outputs dq15 / a-1 dq15 (data input/output, word mode), a-1 (lsb address input, byte mode) ce# chip enable oe# output enable reset# hardware reset pin ry/by# ready/busy output we# write enable vcc supply voltage (2.7-3.6v) vss ground nc not connected to anything byte# byte/word mode en29 lv1 60 b dq 0 ? dq15 (a-1) a0 ? a19 we# ce# ry/by # rese t # byte # o e #
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 5 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 2. top boot sector address tables (en29lv160bt) address range (in hexadecimal) sector a19 a18 a17 a16 a15 a14 a13 a12 sector size (kbytes/ kwords) byte mode (x8) word mode (x16) sa0 0 0 0 0 0 x x x 64/32 000000?00ffff 00000?07fff sa1 0 0 0 0 1 x x x 64/32 010000?01ffff 08000?0ffff sa2 0 0 0 1 0 x x x 64/32 020000?02ffff 10000?17fff sa3 0 0 0 1 1 x x x 64/32 030000?03ffff 18000?1ffff sa4 0 0 1 0 0 x x x 64/32 040000?04ffff 20000?27fff sa5 0 0 1 0 1 x x x 64/32 050000?05ffff 28000?2ffff sa6 0 0 1 1 0 x x x 64/32 060000?06ffff 30000?37fff sa7 0 0 1 1 1 x x x 64/32 070000?07ffff 38000?3ffff sa8 0 1 0 0 0 x x x 64/32 080000?08ffff 40000?47fff sa9 0 1 0 0 1 x x x 64/32 090000?09ffff 48000?4ffff sa10 0 1 0 1 0 x x x 64/32 0a0000?0affff 50000?57fff sa11 0 1 0 1 1 x x x 64/32 0b0000?0bffff 58000?5ffff sa12 0 1 1 0 0 x x x 64/32 0c0000?0cffff 60000?67fff sa13 0 1 1 0 1 x x x 64/32 0d0000?0dffff 68000?6ffff sa14 0 1 1 1 0 x x x 64/32 0e0000?0effff 70000?77fff sa15 0 1 1 1 1 x x x 64/32 0f0000?0fffff 78000?7ffff sa16 1 0 0 0 0 x x x 64/32 100000?10ffff 80000?87fff sa17 1 0 0 0 1 x x x 64/32 110000?11ffff 88000?8ffff sa18 1 0 0 1 0 x x x 64/32 120000?12ffff 90000?97fff sa19 1 0 0 1 1 x x x 64/32 130000?13ffff 98000?9ffff sa20 1 0 1 0 0 x x x 64/32 140000?14ffff a0000?a7fff sa21 1 0 1 0 1 x x x 64/32 150000?15ffff a8000?affff sa22 1 0 1 1 0 x x x 64/32 160000?16ffff b0000?b7fff sa23 1 0 1 1 1 x x x 64/32 170000?17ffff b8000?bffff sa24 1 1 0 0 0 x x x 64/32 180000?18ffff c0000?c7fff sa25 1 1 0 0 1 x x x 64/32 190000?19ffff c8000?cffff sa26 1 1 0 1 0 x x x 64/32 1a0000?1affff d0000?d7fff sa27 1 1 0 1 1 x x x 64/32 1b0000?1bffff d8000?dffff sa28 1 1 1 0 0 x x x 64/32 1c0000?1cffff e0000?e7fff sa29 1 1 1 0 1 x x x 64/32 1d0000?1dffff e8000?effff sa30 1 1 1 1 0 x x x 64/32 1e0000?1effff f0000?f7fff sa31 1 1 1 1 1 0 x x 32/16 1f0000?1f7fff f8000?fbfff sa32 1 1 1 1 1 1 0 0 8/4 1f8000?1f9fff fc000?fcfff sa33 1 1 1 1 1 1 0 1 8/4 1fa000?1fbfff fd000?fdfff sa34 1 1 1 1 1 1 1 x 16/8 1fc000?1fffff fe000?fffff
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 6 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 3. bottom boot sector address tables (en29lv160bb) address range (in hexadecimal) sector a19 a18 a17 a16 a15 a14 a13 a12 sector size (kbytes/ kwords) byte mode (x8) word mode (x16) sa0 0 0 0 0 0 0 0 x 16/8 000000?003fff 00000?01fff sa1 0 0 0 0 0 0 1 0 8/4 004000?005fff 02000?02fff sa2 0 0 0 0 0 0 1 1 8/4 006000?007fff 03000?03fff sa3 0 0 0 0 0 1 x x 32/16 008000?00ffff 04000?07fff sa4 0 0 0 0 1 x x x 64/32 010000?01ffff 08000?0ffff sa5 0 0 0 1 0 x x x 64/32 020000?02ffff 10000?17fff sa6 0 0 0 1 1 x x x 64/32 030000?03ffff 18000?1ffff sa7 0 0 1 0 0 x x x 64/32 040000?04ffff 20000?27fff sa8 0 0 1 0 1 x x x 64/32 050000?05ffff 28000?2ffff sa9 0 0 1 1 0 x x x 64/32 060000?06ffff 30000?37fff sa10 0 0 1 1 1 x x x 64/32 070000?07ffff 38000?3ffff sa11 0 1 0 0 0 x x x 64/32 080000?08ffff 40000?47fff sa12 0 1 0 0 1 x x x 64/32 090000?09ffff 48000?4ffff sa13 0 1 0 1 0 x x x 64/32 0a0000?0affff 50000?57fff sa14 0 1 0 1 1 x x x 64/32 0b0000?0bffff 58000?5ffff sa15 0 1 1 0 0 x x x 64/32 0c0000?0cffff 60000?67fff sa16 0 1 1 0 1 x x x 64/32 0d0000?0dffff 68000?6ffff sa17 0 1 1 1 0 x x x 64/32 0e0000?0effff 70000?77fff sa18 0 1 1 1 1 x x x 64/32 0f0000?0fffff 78000?7ffff sa19 1 0 0 0 0 x x x 64/32 100000?10ffff 80000?87fff sa20 1 0 0 0 1 x x x 64/32 110000?11ffff 88000?8ffff sa21 1 0 0 1 0 x x x 64/32 120000?12ffff 90000?97fff sa22 1 0 0 1 1 x x x 64/32 130000?13ffff 98000?9ffff sa23 1 0 1 0 0 x x x 64/32 140000?14ffff a0000?a7fff sa24 1 0 1 0 1 x x x 64/32 150000?15ffff a8000?affff sa25 1 0 1 1 0 x x x 64/32 160000?16ffff b0000?b7fff sa26 1 0 1 1 1 x x x 64/32 170000?17ffff b8000?bffff sa27 1 1 0 0 0 x x x 64/32 180000?18ffff c0000?c7fff sa28 1 1 0 0 1 x x x 64/32 190000?19ffff c8000?cffff sa29 1 1 0 1 0 x x x 64/32 1a0000?1affff d0000?d7fff sa30 1 1 0 1 1 x x x 64/32 1b0000?1bffff d8000?dffff sa31 1 1 1 0 0 x x x 64/32 1c0000?1cffff e0000?e7fff sa32 1 1 1 0 1 x x x 64/32 1d0000?1dffff e8000?effff sa33 1 1 1 1 0 x x x 64/32 1e0000?1effff f0000?f7fff sa34 1 1 1 1 1 x x x 64/32 1f0000?1fffff f8000?fffff
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 7 en29lv160b rev. i, issue date: 2011 / 10 / 26 product selector guide product number en29lv160b speed -70 max access time, ns (t acc ) 70 max ce# access, ns (t ce ) 70 max oe# access, ns (t oe ) 30 block diagram we# ce# oe# state control command register erase voltage generator input/output buffers program voltage generator chip enable output enable logic data latch y-decoder x-decoder y-gating cell matrix timer vcc detector a0-a19 vcc vss dq0-dq15 (a-1) address latch block protect switches stb stb ry/by#
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 8 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 3. operating modes 16m flash user mode table dq8-dq15 operation ce# oe# we# reset# a0- a19 dq0-dq7 byte# = v ih byte# = v il read l l h h a in d out d out high-z write l h l h a in d in d in high-z cmos standby v cc 0.3v x x v cc 0.3v x high-z high-z high-z ttl standby h x x h x high-z high-z high-z output disable l h h h x high-z high-z high-z hardware reset x x x l x high-z high-z high-z temporary sector unprotect x x x v id a in d in d in x notes: l=logic low= v il , h=logic high= v ih , v id =11 0.5v, x=don?t care (either l or h, but not floating!), d in =data in, d out =data out, a in =address in table 4. autoselect codes (using high voltage, v id ) 16m flash manufacturer/device id table note: 1. a8=h is recommended for manufacturing id check. if a manufac turing id is read with a8=l, the chip will output a configuratio n code 7fh 2. a9 = vid is for hv a9 autoselect mode only. a9 must be vcc (cmos logic level) for command autoselect mode. description ce# oe# we# a19 to a12 a11 to a10 a9 2 a8 a7 a6 a5 to a2 a1 a0 dq8 to dq15 dq7 to dq0 l7fh manufacturer id: eon l l h x x v id h 1 xlxl l x 1ch word l l h 22h c4h device id (top boot block) byte l l h x x v id xxlx l h x c4h word l l h 22h 49h device id (bottom boot block) byte l l h x x v id xxlx l h x 49h x 01h (protected) sector protection verification l l h sa x v id xxlxh l x 00h (unprotected)
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 9 en29lv160b rev. i, issue date: 2011 / 10 / 26 user mode definitions word / byte configuration the signal set on the byte# pin controls whether the device data i/o pins dq15-dq0 operate in the byte or word configuration. when the byte# pin is set at logic ?1?, then the device is in word configuration, dq15-dq0 are active and are controlled by ce# and oe#. on the other hand, if the byte# pin is set at logic ?0?, then the device is in byte configuration, and only data i/o pins dq0-dq7 are active and controlled by ce# and oe#. the data i/o pins dq8-dq14 are tri-stated, and the dq15 pin is used as an input for the lsb (a-1) address function. standby mode the en29lv160b has a cmos-compatible standby mode, which reduces the current to < 1a (typical). it is placed in cmos-compatible standby when the ce# pin is at v cc 0.5. reset# and byte# pin must also be at cmos input levels. the device also has a ttl-compatible standby mode, which reduces the maximum v cc current to < 1ma. it is placed in ttl-compatible standby when the ce# pin is at v ih . when in standby modes, the outputs are in a high-impedance state independent of the oe# input. read mode the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see ?erase suspend/erase resume commands? for more additional information. the system must issue the reset command to re-enable the device for reading array data if dq5 goes high, or while in the autoselect mode. see the ?reset command? additional details. output disable mode when the ce# or oe# pin is at a logic high level (v ih ), the output from the en29lv160b is disabled. the output pins are placed in a high impedance state. auto select identification mode the autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on dq15?dq0. this mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-system through the command register. when using programming equipment, the autoselect mode requires v id (10.5 v to 11.5 v) on address pin a9. address pins a6, a1, and a0 must be as shown in autoselect codes table. in addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. refer to the corresponding sector address tables. the command definitions table shows the remaining address bits that are don?t-care. when all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on dq15?dq0. to access the autoselect codes in-system; the host system can issue the autoselect command via the command register, as shown in the command definitions table. this method does not require v id . see ?command definitions? for details on using the autoselect mode.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 10 en29lv160b rev. i, issue date: 2011 / 10 / 26 write mode programming is a four-bus-cycle operation. the program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further controls or timings. the device automatically provides internally generated program pulses and verifies the programmed cell margin. the command definitions in table 5 show the address and data requirements for the byte program command sequence. when the embedded program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. the system can determine the status of the program operation by using dq7 or dq6. see ?write operation status? for information on these status bits. any commands written to the device during the embedded program algorithm are ignored. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a ?0? back to a ?1?. attempting to do so may halt the operation and set dq5 to ?1?, or cause the data# polling algorithm to indicate the operation was successful. however, a succeeding read will show that the data is still ?0?. only erase operations can convert a ?0? to a ?1?. sector protection/unprotection the hardware sector protection feature disables both program and erase operations in any sector. the hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. there are two methods to enabling this hardware protection circuitry. the first one requires only that the reset# pin be at v id and then standard microprocessor timings can be used to enable or disable this feature. see flowchart 7a and 7b for the algorithm and figure 12 for the timings. when doing sector unprotect, all the other sectors should be protected first. the second method is meant for programming equipment. this method requires v id be applied to both oe# and a9 pin and non-standard microprocessor timings are used. this method is described in a separate document called en29lv160b supplement, which can be obtained by contacting a representative of eon silicon solution, inc. temporary sector unprotect this feature allows temporary unprotection of previously protected sector groups to change data while in-system. the sector unprotect mode is activated by setting the reset# pin to v id . during this mode, formerly protected sectors can be programmed or erased by simply selecting the sector addresses. once is removed from the reset# pin, all the previously protected sectors are protected again. see accompanying figure and timing diagrams for more details. start reset#=v id (note 1) perform erase or program operations reset#=v ih temporary sector unprotect completed ( note 2 ) notes: 1. all protected sectors unprotected. 2. previously protected sectors protected again.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 11 en29lv160b rev. i, issue date: 2011 / 10 / 26 common flash interface (cfi) the common flash interface (cfi) specification outlines device and host systems software interrogation handshake, which allows specific vendor-specified softw are algorithms to be used for entire families of devices. software support can then be device-independent, jedec id-independent, and forward- and backward-compatible for the specified flash device families. flash vendors can standardize their existing interfaces for long-term compatibility. this device enters the cfi query mode when the system writes the cfi query command, 98h, to address 55h in word mode (or address aah in byte mode), any time the device is ready to read array data. the system can read cfi information at the addresses given in tables 5-8. in word mode, the upper address bits (a7?msb) must be all zeros. to terminate reading cfi data, the system must write the reset command. the system can also write the cfi query command when the device is in the autoselect mode. the device enters the cfi query mode and the system can read cfi data at the addresses given in tables 5?8. the system must write the reset command to return the device to the autoselect mode. table 5. cfi query identification string adresses (word mode) adresses (byte mode) da ta description 10h 11h 12h 20h 22h 24h 0051h 0052h 0059h query unique ascii string ?qry? 13h 14h 26h 28h 0002h 0000h primary oem command set 15h 16h 2ah 2ch 0040h 0000h address for primary extended table 17h 18h 2eh 30h 0000h 0000h alternate oem command set (00h = none exists) 19h 1ah 32h 34h 0000h 0000h address for alternate oem extended table (00h = none exists table 6. system interface string addresses (word mode) addresses (byte mode) data description 1bh 36h 0027h vcc min (write/erase) d7-d4: volt, d3 ?d0: 100 millivolt 1ch 38h 0036h vcc max (write/erase) d7-d4: volt, d3 ?d0: 100 millivolt 1dh 3ah 0000h vpp min. voltage (00h = no vpp pin present) 1eh 3ch 0000h vpp max. voltage (00h = no vpp pin present) 1fh 3eh 0004h typical timeout per single byte/word write 2^n s 20h 40h 0000h typical timeout for min, size buffer write 2^n s (00h = not supported) 21h 42h 000ah typical timeout per individual block erase 2^n ms 22h 44h 0000h typical timeout for full chip erase 2^n ms (00h = not supported) 23h 46h 0005h max. timeout for byte/word write 2^n times typical 24h 48h 0000h max. timeout for buffer write 2^n times typical 25h 4ah 0004h max. timeout per individual block erase 2^n times typical 26h 4ch 0000h max timeout for full chip erase 2^n times typical (00h = not supported)
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 12 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 7. device geometry definition addresses (word mode) addresses (byte mode) da ta description 27h 4eh 0015h device size = 2^n byte 28h 29h 50h 52h 0002h 0000h flash device interface description (refer to cfi publication 100) 2ah 2bh 54h 56h 0000h 0000h max. number of byte in multi-byte write = 2^n (00h = not supported) 2ch 58h 0004h number of erase block regions within device 2dh 2eh 2fh 30h 5ah 5ch 5eh 60h 0000h 0000h 0040h 0000h erase block region 1 information (refer to the cfi specification of cfi publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 0001h 0000h 0020h 0000h erase block region 2 information 35h 36h 37h 38h 6ah 6ch 6eh 70h 0000h 0000h 0080h 0000h erase block region 3 information 39h 3ah 3bh 3ch 72h 74h 76h 78h 001eh 0000h 0000h 0001h erase block region 4 information table 8. primary vendor-specific extended query addresses (word mode) addresses (byte mode) da ta description 40h 41h 42h 80h 82h 84h 0050h 0052h 0049h query-unique ascii string ?pri? 43h 86h 0031h major version number, ascii 44h 88h 0030h minor version number, ascii 45h 8ah 0000h address sensitive unlock 0 = required, 1 = not required 46h 8ch 0002h erase suspend 0 = not supported, 1 = to read only, 2 = to read & write 47h 8eh 0001h sector protect 0 = not supported, x = number of sectors in per group 48h 90h 0001h sector temporary unprotect 00 = not supported, 01 = supported 49h 92h 0004h sector protect/unprotect scheme 01 = 29f040 mode, 02 = 29f016 mode, 03 = 29f400 mode, 04 = 29lv800a mode 4ah 94h 0000h simultaneous operation 00 = not supported, 01 = supported 4bh 96h 0000h burst mode type 00 = not supported, 01 = supported 4ch 98h 0000h page mode type 00 = not supported, 01 = 4 word page, 02 = 8 word page
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 13 en29lv160b rev. i, issue date: 2011 / 10 / 26 hardware data protection the command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes as seen in the command definitions table. additionally, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by false system level signals during vcc power up and power down transitions, or from system noise. low v cc write inhibit when vcc is less than v lko , the device does not accept any write cycles. this protects data during vcc power up and power down. the command register and all internal program/erase circuits are disabled, and the device resets. subsequent writes are ignored until vcc is greater than v lko . the system must provide the proper signals to the control pins to prevent unintentional writes when vcc is greater than v lko . write pulse ?glitch? protection noise pulses of less than 5 ns (typical) on oe#, ce# or we# do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe# = v il , ce# = v ih , or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero while oe# is a logical one. if ce#, we#, and oe# are all logical zero (not recommended usag e), it will be co nsidered a read. power-up write inhibit during power-up, the device automatically resets to read mode and locks out write cycles. even with ce# = v il , we#= v il and oe# = v ih , the device will not accept comma nds on the rising edge of we#.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 14 en29lv160b rev. i, issue date: 2011 / 10 / 26 command definitions the operations of the en29lv160b are selected by one or more commands written into the command register to perform read/reset memory, read id, read sector protection, program, sector erase, chip erase, erase suspend and erase resume. commands are made up of data sequences written at specific addresses via the command register. the se quences for the specified operation are defined in the command definitions table (table 5). incorrect addresses, incorrect data values or improper sequences will reset the device to read mode. table 9. en29lv160b command definitions bus cycles 1 st write cycle 2 nd write cycle 3 rd write cycle 4 th write cycle 5 th write cycle 6 th write cycle command sequence cycles add data add data add data add data add data add data read 1 ra rd reset 1 xxx f0 000 7f word 555 2aa 555 100 1c 000 7f manufacturer id byte 4 aaa aa 555 55 aaa 90 200 1c word 555 2aa 555 x01 22c4 device id top boot byte 4 aaa aa 555 55 aaa 90 x02 c4 word 555 2aa 555 x01 2249 device id bottom boot byte 4 aaa aa 555 55 aaa 90 x02 49 xx00 word 555 2aa 555 (sa) x02 xx01 00 autoselect sector protect verify byte 4 aaa aa 555 55 aaa 90 (sa) x04 01 word 555 2aa 555 program byte 4 aaa aa 555 55 aaa a0 pa pd word 555 2aa 555 555 2aa 555 chip erase byte 6 aaa aa 555 55 aaa 80 aaa aa 555 55 aaa 10 word 555 2aa 555 555 2aa sector erase byte 6 aaa aa 555 55 aaa 80 aaa aa 555 55 sa 30 erase suspend 1 xxx b0 erase resume 1 xxx 30 word 55 cfi query byte 1 aa 98 address and data values indicated in hex ra = read address: address of the memory location to be read. this is a read cycle. rd = read data: data read from location ra during read operation. this is a read cycle. pa = program address: address of the memory location to be programmed. x = don?t-care pd = program data: data to be programmed at location pa sa = sector address: address of the sector to be erased or verified. address bits a19-a12 uniquely select any sector. reading array data the device is automatically set to reading array data after power up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algorithm. following an erase suspend command, erase suspend mode is entered. the system can read array data using the standard read timings, with the only difference in that if it reads at an address within erase suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 15 en29lv160b rev. i, issue date: 2011 / 10 / 26 the reset command must be issued to re-enable the device for reading array data if dq5 goes high, or while in the autoselect mode. see next section for details on reset. reset command writing the reset command to the device resets the device to reading array data. address bits are don?t- care for this command. the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during erase suspend). if dq5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. the command definitions table shows the address and data requirements. this is an alternative to the method that requires v id on address bit a9 and is intended for prom programmers. two unlock cycles followed by the autoselect command initiate the autoselect command sequence. autoselect mode is then entered and the system may read at addresses shown in table 4 any number of times, without needing another command sequence. the system must write the reset command to exit the autoselect mode and return to reading array data. word / byte programming command the device can be programmed by byte or by word, depending on the state of the byte# pin. programming the en29lv160b is performed by using a four-bus-cycle operation (two unlock write cycles followed by the program setup command and program data write cycle). when the program command is executed, no additional cpu controls or timings are necessary. an internal timer terminates the program operation automatically. addre ss is latched on the falling edge of ce# or we#, whichever is last; data is latched on the rising edge of ce# or we#, whichever is first. programming status can be checked by sampling data on dq7 (data# polling) or on dq6 (toggle bit). when the program operation is successfully completed, the device returns to read mode and the user can read the data programmed to the device at that address. note that data can not be programmed from a ?0? to a ?1?. only an erase operation can change a data from ?0? to ?1?. when programming time limit is exceeded, dq5 w ill produce a logical ?1? an d a reset command can retu rn the device to read mode.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 16 en29lv160b rev. i, issue date: 2011 / 10 / 26 chip erase command chip erase is a six-bus-cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to eras e. the embedded erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. the command definitions table shows the address and data requirements for the chip erase command sequence. any commands written to the chip during the embedded chip erase algorithm are ignored. the system can determine the status of the erase operation by using dq7, dq6, or dq2. see ?write operation status? for information on these status bits. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. flowchart 4 illustrates the algorithm for the erase operation. see the erase/program operations tables in ?ac characteristics? for parameters, and to the chip/sector erase operation timings for timing waveforms. sector erase command sequence sector erase is a six bus cycle operation. the sector erase command sequence is initiated by writing two un-lock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. the command definitions table shows the address and data requirements for the sector erase command sequence. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. the system can determine the status of the erase operation by using dq7, dq6, or dq2. refer to ?write operation status? for information on these status bits. flowchart 4 illustrates the algorithm for the erase operation. refe r to the erase/program operations tables in the ?ac characteristics? section for parameters, and to the sector erase operations timing diagram for timing waveforms. erase suspend / resume command the erase suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sector erase operation. the erase suspend comm and is ignored if written during the chip erase operation or embedded program algorithm. addresses are don?t-cares when writing the erase suspend command. when the erase suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. after the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (the device ?erase suspends? all sectors selected for erasure.) normal read and write timings and command definitions apply. reading at any address within erase- suspended sectors produces status data on dq7?dq0. the system can use dq7, or dq6 and dq2 together, to determine if a sector is actively erasing or is erase-suspended. see ?write operation status? for information on these status bits. after an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. the system can determine the status of the program operation using the dq7 or dq6 status bits, just as in the standard program operation. see ?write operation status? for more information. the autoselect command is not supported during erase suspend mode.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 17 en29lv160b rev. i, issue date: 2011 / 10 / 26 the system must write the erase resume command (a ddress bits are don?t-care) to exit the erase suspend mode and continue the sector erase operation. further writes of the resume command are ignored. another erase suspend command can be written after the device has resumed erasing. write operation status dq7 data# polling the en29lv160b provides data# polling on dq7 to indicate the status of the embedded operations. the data# polling feature is active during byte programming, sector erase, chip erase, and erase suspend. (see table 10) when the embedded programming is in progress, an attempt to read the device will produce the complement of the data written to dq7. upon the completion of the byte programming, an attempt to read the device will produce the true data written to dq7. for the by te programming, data# polling is valid after the rising edge of the fourth we# or ce# pulse in the four-cycle sequence. when the embedded erase is in pr ogress, an attempt to read the de vice will produce a ?0? at the dq7 output. upon the completion of th e embedded erase, the device will produce the ?1? at the dq7 output during the read cycles. for chip erase, the data# po lling is valid after the rising edge of the sixth we# or ce# pulse in the six-cycle seque nce. data# polling is valid after th e last rising edge of the we# or ce# pulse for chip erase or sector erase. data# polling must be performed at any address within a sector that is being programmed or erased and not a protected sector. otherwise, data# polling ma y give an inaccurate result if the address used is in a protected sector. just prior to the completion of the embedded operations, dq7 may change asynchronously when the output enable (oe#) is low. this means that the device is driving status information on dq7 at one instant of time and valid data at the next instant of time. depending on when the system samples the dq7 output, it may read the status of valid data. even if the device has completed the embedded operations and dq7 has a valid data, the data output on dq0-dq6 may be still invalid. the valid data on dq0-dq7 will be read on the subsequent read attempts. the flowchart for data# polling (dq7) is shown on flowchart 5. the data# polling (dq7) timing diagram is shown in figure 8. ry/by#: ready/busy the ry/by# is a dedicated, open-drain output pin that indicates whether an embedded algorithm is in progress or completed. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, several ry/by# pins can be tied together in parallel with a pull-u p resistor to vcc. in the output-low period, signifying busy, the device is actively erasing or programming. this includes programming in the erase suspend mode. if the output is high, signifying the ready, the device is ready to read array data (including during the erase suspend mode), or is in the standby mode.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 18 en29lv160b rev. i, issue date: 2011 / 10 / 26 dq6 toggle bit i the en29lv160b provides a ?toggle bit? on dq6 to indicate the status of the embedded programming and erase operations. (see table 6) during an embedded program or erase operation, successive attempts to read data from the device at any address (by active oe# or ce#) will re sult in dq6 toggling between ?z ero? and ?one?. once the embedded program or erase operation is completed, dq6 will stop toggling and valid data will be read on the next successive attempts. during embedded programming, the toggle bit is valid after the rising edge of the fourth we# pulse in the four-cycle sequence. during erase operation, the toggle bit is valid after the rising edge of the sixth we# pulse for sector erase or chip erase. in embedded programmi ng, if the sector being written to is protected, dq6 will toggles for about 2 s, then stop toggling without the data in the sector having changed. in sector erase or chip erase, if all selected sectors are protected, dq6 will toggle for about 100 s. the chip will then return to the read mode without changing data in all protected sectors. the flowchart for the toggle bit (dq6) is shown in flowchart 6. the toggle bit timing diagram is shown in figure 9 . dq5 exceeded timing limits dq5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. under these conditions dq5 produces a ?1.? this is a failure condition that indicates the program or erase cycle was not successfully completed. since it is possible that dq5 can become a 1 when the device has successfully completed its operation and has returned to read mode, the user must check again to see if the dq6 is toggling after detecting a ?1? on dq5. the dq5 failure condition may appear if the system tries to program a ?1? to a location that is previously programmed to ?0.? only an erase operation can change a ?0? back to a ?1.? under this condition, the device halts the operation, and when the operation has exceeded the timing limits, dq5 produces a ?1.? under both these conditions, the system must issue the reset command to return the device to reading array data. dq3 sector erase timer after writing a sector erase command sequence, the output on dq3 can be used to determine whether or not an erase operation has begun. (the sector erase timer does not apply to the chip erase command.) when sector erase starts, dq3 switches fr om ?0? to ?1.? this device does not support multiple sector erase command sequences so it is not very meaningful since it immediately shows as a ?1? after the first 30h command. future devices may support this feature. dq2 erase toggle bit ii the ?toggle bit? on dq2, when used with dq6, indicates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. dq2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (the system may use either oe# or ce# to control the read cycles.) but dq2 cannot distinguish whether the sector is actively erasing or is erase-suspended. dq6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for erasure. thus, both status bits are required for sector and mode information. refer to table 5 to compare outputs for dq2 and dq6. flowchart 6 shows the toggle bit algorithm, and the section ?dq2: toggle bit? explains the algorithm. see also the ?dq6: toggle bit i? subsection. refer to the toggle bit timings figure for the toggle bit timing diagram. the dq2 vs. dq6 figure shows the differences between dq2 and dq6 in graphical form.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 19 en29lv160b rev. i, issue date: 2011 / 10 / 26 reading toggle bits dq6/dq2 refer to flowchart 6 for the following discussion. whenever the system initially begins reading toggle bit status, it must read dq7?dq0 at least twice in a row to determine whether a toggle bit is toggling. typically, a system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on dq7?dq0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of dq5 is high (see the section on dq5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as dq5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the device did not complete the operation successfully, and the system must write th e reset command to return to reading array data. the remaining scenario is that the system initially de termines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of flowchart 6). write operation status operation dq7 dq6 dq5 dq3 dq2 ry/by# embedded program algorithm dq7# toggle 0 n/a no toggle 0 standar d mode embedded erase algorithm 0 toggle 0 1 toggle 0 reading within erase suspended sector 1 no toggle 0 n/a toggle 1 reading within non-erase suspended sector data data data data data 1 erase suspend mode erase-suspend program dq7# toggle 0 n/a n/a 0
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 20 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 10. status register bits dq name logic level definition ?1? erase complete or erase sector in erase suspend ?0? erase on-going dq7 program complete or data of non-erase sector during erase suspend 7 data# polling dq7# program on-going ?-1-0-1-0-1-0-1-? erase or program on-going dq6 read during erase suspend 6 toggle bit ?-1-1-1-1-1-1-1-? erase complete ?1? program or erase error 5 time out bit ?0? program or erase on-going ?1? erase operation start 3 erase time out bit ?0? erase timeout period on-going ?-1-0-1-0-1-0-1-? chip erase, erase or erase suspend on currently addressed sector. (when dq5=1, erase error due to currently addressed sector. program during erase suspend on- going at current address 2 toggle bit dq2 erase suspend read on non erase suspend sector notes: dq7 data# polling: indicates the p/e status check during progr am or erase, and on completion before checking bits dq5 for program or erase success. dq6 toggle bit: remains at constant level when p/e operations are complete or erase suspend is acknowledged. successive reads output complementary data on dq6 while programming or erase operation are on-going. dq5 time out bit: set to ?1? if failure in programming or erase dq3 sector erase command timeout bit: operation has started. only possible command is erase suspend (es). dq2 toggle bit: indicates the erase status and allows identification of the erased sector.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 21 en29lv160b rev. i, issue date: 2011 / 10 / 26 embedded algorithms flowchart 1. embedded program star t write program command sequence (shown below) data# poll device las t a ddress? programming done inc rement address n o ye s verify data? no yes flowchart 2. embedded program command sequence see the command definitions section for more information. 2aah / 55h 555h / aah 555h / a0h program address / program data
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 22 en29lv160b rev. i, issue date: 2011 / 10 / 26 flowchart 3. embedded erase flowchart 4. embedded erase command sequence see the command definitions section for more information. chip erase sector erase 2aah/55h 555h/aah 555h/80h 2aah/55h 555h/aah 555h/10h 555h/aah 2aah/55h 555h/80h 555h/aah 2aah/55h sector address/30h start write erase command sequence data# poll from system or toggle bit successfully completed erase done data =ffh? yes no
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 23 en29lv160b rev. i, issue date: 2011 / 10 / 26 flowchart 5. data# polling algorithm notes: (1) this second read is necessary in case the first read was done at the exact instant when the status data was in transition. flowchart 6. toggle bit algorithm notes: (2) this second set of reads is necessary in case the first set of reads was done at the exact instant when the status data was in transition. no no dq7 = data? dq5 = 1? dq7 = data? yes yes no yes read data start read data (1) fail pass no yes dq6 = toggle? dq5 = 1? dq6 = toggle? no no yes yes read data twice start read data twice (2) fail pass
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 24 en29lv160b rev. i, issue date: 2011 / 10 / 26 flowchart 7a. in-system sector protect flowchart start plscnt = 1 reset# = v id wait 1 s first write cycle = 60h? no temporary sector unprotect mode yes set up sector address sector protect: write 60h to sector addr with a6 = 0, a1 = 1, a0 = 0 wait 150 s verify sector protect: write 40h to sector address with a6 = 0, a1 = 1, a0 = 0 read from sector address with a6 = 0, a1 = 1, a0 = 0 data = 01h? no plscnt = 25? increment plscnt no device failed yes protect another sector? yes reset plscnt = 1 no remove v id from reset# write reset command sector protect complete sector protect algorithm yes wait 0.4 s
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 25 en29lv160b rev. i, issue date: 2011 / 10 / 26 flowchart 7b. in-system sector unprotect flowchart start plscnt = 1 reset# = v id wait 1 s first write cycle = 60h? temporary sector unprotect mode no yes all sectors protected? yes no protect all sectors: the indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address (see diagram 7a.) set up first sector address sector unprotect: write 60h to sector address with a6 = 1, a1 = 1, a0 = 0 wait 15 ms verify sector unprotect: write 40h to sector address with a6 = 1, a1 = 1, a0 =0 read from sector address with a6 = 1, a1 = 1, a0 = 0 data = 00h? no plsccnt = 1000? no increment plscnt yes device failed last sector verified? no set up next sector address remove v id from reset# write reset command sector unprotect com p lete sector unprotect algorithm wait 0.4 s yes yes
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 26 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 11. dc characteristics (t a = - 40c to 85c; v cc = 2.7-3.6v) notes 1. byte# pin can also be gnd 0.3v. byte# and reset# pin input buffers are always enabled so that they draw power if not at full cmos supply voltages. symbol parameter test conditions min typ max unit i li input leakage current 0v v in vcc 5 a i lo output leakage current 0v v out vcc 5 a active read current ( byte mode) 9 16 ma i cc1 active read current ( word mode) ce# = v il ; oe# = v ih ; f = 5mhz 9 16 ma i cc2 supply current (standby- cmos) ce# = byte# = reset# = vcc 0.3v (note 1) 1 5.0 a i cc3 supply current (program or erase) byte program, sector or chip erase in progress 20 30 ma v il input low voltage -0.5 0.8 v v ih input high voltage 0.7 x vcc vcc + 0.3 v v ol output low voltage i ol = 4.0 ma 0.45 v v oh output high voltage cmos i oh = -100 a vcc - 0.4v v v id a9 voltage (electronic signature) 10.5 11.5 v i id a9 current (electronic signature) a9 = v id 100 a v lko supply voltage (erase and program lock-out) 2.3 2.5 v
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 27 en29lv160b rev. i, issue date: 2011 / 10 / 26 test conditions test specifications test conditions -70 unit output load capacitance, c b l b 30 pf input rise and fall times 5 ns input pulse levels 0.0-3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 28 en29lv160b rev. i, issue date: 2011 / 10 / 26 ac characteristics hardware reset (reset#) speed paramete r std description test setup -70 unit t rp1 reset# pulse width (during embedded algorithms) min 10 us t rp2 reset# pulse width (not during embedded algorithms) min 500 ns t rh reset# high time before read min 50 ns t rb1 ry/by# recovery time ( to ce#, oe# go low) min 0 ns t rb2 ry/by# recovery time ( to we# go low) min 50 ns t ready1 reset# pin low (during embedded algorithms) to read or write max 20 us t ready2 reset# pin low (not during embedded algorithms) to read or write max 500 ns figure 1. ac waveforms for reset# reset# timings ce#, oe# we# ry/by# reset# t rp1 t ready1 t rb2 t rb1 reset timing during embedded algorithms reset# ry/by# ce#, oe# t ready2 t rh t rp2 reset timing not during embedded algorithms
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 29 en29lv160b rev. i, issue date: 2011 / 10 / 26 ac characteristics word / byte configuration (byte#) speed std parameter description test setup -70 unit t bcs byte# to ce# switching setup time min 0 ns t cbh ce# to byte# switching hold time min 0 ns t rbh ry/by# to byte# switching hold time min 0 ns figure 2. ac waveforms for byte# byte# timings for read operations byte #timings for write operations note: switching byte# pin not allowed during embedded operations t c bh t b cs ce# oe# byte# ce# we# t b cs b y te# t rbh ry/by#
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 30 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 12. ac characteristics read-only operations characteristics parameter symbols speed jedec standard description test setup -70 unit t avav t rc read cycle time min 70 ns t avqv t acc address to output delay ce# = v il oe#= v il max 70 ns t elqv t ce chip enable to output delay oe#= v il max 70 ns t glqv t oe output enable to output delay max 30 ns t ehqz t df chip enable to output high z max 20 ns t ghqz t df output enable to output high z max 20 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first min 0 ns read min 0 ns t oeh output enable hold time toggle and data # polling min 10 ns notes: 1. high z is not 100% tested. 2. for - 70 vcc = 2.7v ? 3.6v output load : 30pf input rise and fall times: 5ns input rise levels: 0.0 v to 3.0 v timing measurement reference level, input and output: 1.5 v figure 3. ac waveforms for read operations addresses ce# oe# we# outputs reset# ry/by# t b acc 0v high z output valid t b ce b t b oh t b df t b oeh b high z t b oe b t b rc b addresses stable
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 31 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 13. ac characteristics write (erase/program) operations parameter symbols speed jedec standard description -70 unit t avav t wc write cycle time (note 1) min 70 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 ns t dvwh t ds data setup time min 30 ns t whdx t dh data hold time min 0 ns read min 0 ns t oeh output enable hold time toggle and data# polling min 10 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) min 0 ns t elwl t cs ce# setuptime min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp write pulse width min 35 ns t whdl t wph write pulse width high min 20 ns typ 8 s t whwh1 t whwh1 programming operation (word and byte mode) max 200 s sector typ 0.1 s t whwh2 t whwh2 erase operation (note 2) chip max 4 s t vcs vcc setup time min 50 s t b busy we# high to ry/by# low max 70 ns t rb recovery time from ry/by# min 0 ns 1. not 100% tested. 2. see erase and programming performance for more information.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 32 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 14. ac characteristics write (erase/program) operations alternate ce# controlled writes parameter symbols speed jedec standard description -70 unit t avav t wc write cycle time (note 1) min 70 ns t avel t as address setup time min 0 ns t elax t ah address hold time min 45 ns t dveh t ds data setup time min 30 ns t ehdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns read min 0 ns t oeh output enable hold time toggle and data polling min 10 ns t ghel t ghel read recovery time before write (oe# high to ce# low) min 0 ns t wlel t ws we# setuptime min 0 ns t ehwh t wh we# hold time min 0 ns t eleh t cp write pulse width min 35 ns t ehel t cph write pulse width high min 20 ns typ 8 s t whwh1 t whwh1 programming operation (byte and word mode) (note 2) max 200 s sector typ 0.1 s t whwh2 t whwh2 erase operation (note 2) chip typ 4 s t vcs vcc setup time min 50 s t rb recovery time from ry/by# min 0 ns 1. not 100% tested. 2. see erase and programming performance for more information.
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 33 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 15. erase and programming performance limits parameter typ max unit comments sector erase time 0.1 2 sec chip erase time 4 35 sec excludes 00h programming prior to erasure byte programming time 8 200 s word programming time 8 200 s byte 16.8 50.4 chip programming time word 8.4 25.2 sec excludes system level overhead erase/program endurance 100k cycles minimum 100k cycles notes: maximum program and erase time assume the following conditions v cc = 2.7 v , 85c table 16. 48-pin tsop and bga package capacitance parameter symbol parameter description test setup package typ max unit tsop 6 7.5 c b in b input capacitance v b in b = 0 bga 1.2 1.2 pf tsop 8.5 12 c b out b output capacitance v b out b = 0 bga 1.1 1.2 pf tsop 7.5 9 c b in2 b control pin capacitance v b in b = 0 bga 1.0 1.3 pf note: test conditions are temperature = 25c and f = 1.0 mhz. table 17. data retention parameter description test conditions min unit 150c 10 years data retention time 125c 20 years
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 34 en29lv160b rev. i, issue date: 2011 / 10 / 26 ac characteristics figure 4. ac waveforms for chip /sector erase operations timings notes: 1. sa=sector address (for sector erase) , va=valid address for reading status, d out =true data at read address. 2. v cc shown only to illustrate t vcs measurement references. it cannot o ccur as shown during a valid command sequence. 10 for chip erase t dh t d s 0x55 0x30 status d ou t t whwh2 v cc a ddresses ce# oe# we# data ry/by# t c h t g hw l t c s t wph t wp t b us y t rb t v cs erase command sequence (last 2 cycles) read status data (last two cycles) t ah t w c 0x2aa s a v a v a t a s 0x555 for chip erase
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 35 en29lv160b rev. i, issue date: 2011 / 10 / 26 figure 5. program operation timings notes: 1. pa=program address, pd=program data, d out is the true data at the program address. 2. v cc shown in order to illustrate t vcs measurement references. it cannot occur as shown during a valid command sequence. t vcs t whwh1 t busy t ds t dh d out status pd oxa0 t rb t ah t as t wc 0x555 pa pa pa program command sequence (last 2 cycles) program command sequence (last 2 cycles) t ghwl data ry/by# v cc we# addresses ce# oe# t ch t wph t cs t wp
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 36 en29lv160b rev. i, issue date: 2011 / 10 / 26 figure 6. ac waveforms for /data polling during embedded algorithm operations notes: 1. va=valid address for reading data# polling status data 2. this diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cy cle. figure 7. ac waveforms for toggle bit during embedded algorithm operations t b u s y t oeh t df t o e t c e t c h t a cc t r c v a v a v a t o h valid data true com p lement comple -ment status data status data true valid data ce# addresses oe# we# dq[7] dq[6:0] ry/by# t c e t o e t c h valid data valid status valid status valid status (first read) (second read) (stops toggling) a ddresses ce# oe# we# dq6, dq2 ry/by# t r c t a cc v a v a v a v a t o eh t df t o h t b usy
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 37 en29lv160b rev. i, issue date: 2011 / 10 / 26 figure 8. alternate ce# controlled write operation timings notes: pa = address of the memory location to be programmed. pd = data to be programmed at byte address. va = valid address for reading program or erase status d out = array data read at va shown above are the last two cycles of the program or erase command sequence and the last status read cycle reset# shown to illustrate t rh measurement references. it cannot occur as shown during a valid command sequence. figure 9. dq2 vs. dq6 we# dq6 dq2 enter embedded erase erase suspend enter erase suspend program erase resume erase enter suspend read enter suspend program erase erase complete erase suspend read t rh t wh t ghel t cp pd for program 0x30 for sector erase 0x10 for chip erase 0xa0 for program 0x55 for erase d out status t busy t ds t dh t cph t ws t whwh1 / t whwh2 addresses we# oe# ce# data ry/by reset# t ah t as t wc va pa for program sa for sector erase 0x555 for chip erase 0x555 for program 0x2aa for erase
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 38 en29lv160b rev. i, issue date: 2011 / 10 / 26 table 19. temporary sector unprotect speed option unit parameter std description -70 t vidr v id rise and fall time min 500 ns t rsp reset# setup time for temporary sector unprotect min 4 s notes: t rsp is not 100% tested. figure 10. temporary sect or unprotect timing diagram figure 11. sector protect/unprotect timing diagram notes: use standard microprocessor timings for this device for read and write cycles. for sector protect, use a6=0, a1=1, a0=0. for sector unprotect, use a6=1, a1=1, a0=0. 0 or 3 v reset# t vidr t vidr t rsp v id 0 or 3 v ce# we# ry/by# v id sa, a6,a1,a0 reset# 0 v t vidr t vidr >1
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 39 en29lv160b rev. i, issue date: 2011 / 10 / 26 figure 12. 48l tsop 12mm x 20mm package outline
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 40 en29lv160b rev. i, issue date: 2011 / 10 / 26 figure 13. 48l tfbga 6mm x 8mm package outline min. nor max a - - - - - - 1.30 a1 0.23 0.29 0.35 a2 0.84 0.91 0.95 d 7.90 8.00 8.10 e 5.90 6.00 6.10 d1 - - - 5.60 - - - e1 - - - 4.00 - - - e - - - 0.80 - - - b 0.35 0.40 0.45 dimension in mm symbol note : 1. coplanarity: 0.1 mm
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 41 en29lv160b rev. i, issue date: 2011 / 10 / 26 absolute maximum ratings parameter value unit storage temperature -65 to +150 c plastic packages -65 to +125 c ambient temperature with power applied -55 to +125 c output short circuit current 1 200 ma a9, oe#, reset# 2 -0.5 to +11.5 v all other pins 3 -0.5 to vcc+0.5 v voltage with respect to ground vcc -0.5 to + 4.0 v notes: 1. no more than one output shorted at a time. duration of the short circuit should not be greater than one second. 2. minimum dc input voltage on a9, oe#, reset# pins is ?0.5v. during voltage transitions, a9, oe#, reset# pins may undershoot v ss to ?1.0v for periods of up to 50ns and to ?2.0v for periods of up to 20ns. see figure below. maximum dc input voltage on a9, oe#, and reset# is 11.5v which may overshoot to 12.5v for periods up to 20ns. 3. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, inputs may undershoot v ss to ?1.0v for periods of up to 50ns and to ?2.0 v for periods of up to 20ns. see figure below. maximum dc voltage on output and i/o pins is v cc + 0.5 v. during voltage transitions, outputs may overshoot to v cc + 1.5 v for periods up to 20ns. see figure below. 4. stresses above the values so mentioned above may cause permanent damage to the device. these values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability. recommended operating ranges 1 parameter value unit ambient operating temperature industrial devices -40 to 85 c operating supply voltage vcc full voltage range: 2.7 to 3.6v v 3. recommended operating ranges define those limits between which the functionality of the device is guaranteed. vcc +1.5v maximum negative overshoot maximum positive overshoot waveform waveform
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 42 en29lv160b rev. i, issue date: 2011 / 10 / 26 ordering information en29lv160b t - 70 t i p packaging content (blank) = conventional p = rohs compliant temperature range i = industrial (-40 c to +85 c) package t = 48-pin tsop b = 48-ball thin fine pitch ball grid array (tfbga) 0.80mm pitch, 6mm x 8mm package speed 70 = 70ns boot code sector architecture t = top boot sector b = bottom boot sector base part number en = eon silicon solution inc. 29lv = flash, 3v read program erase 160 = 16 megabit (2m x 8 / 1m x 16) b = version identifier
this data sheet may be revised by subsequent versions ? 2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 43 en29lv160b rev. i, issue date: 2011 / 10 / 26 revisions list revision no description date a preliminary draft 2008/03/12 b 1. remove 44-pin sop package on page 1 2 39 and 44. 2. remove c grade option of temperature range on page 1 and page 44 3. update 48 pin tsop-i package outline on page 38 2008/06/17 c modify figure 5. ac waveforms for read operations in page 29 2008/07/17 d 1. delete -90 speed option in datasheet. 2. add t oeh on table12. 3. delete t oes , t vidr and add t busy on table13. 4. delete t vidr and add t rb on table 14. 2008/08/01 e add chip erase time max value in table 15 on page 32. 2008/08/21 f add 48l tfbga package a1, a2 dimension maximum value on page 39. 2008/08/29 g add eon products? new top marking ?cfeon? information on page 1. 2009/01/09 h 1. update erase and program performance on page 2 and 32. 2. modify table 10 status register bits dq5 from erroe bit to time out bit on page 20. 3. modify i oh from -100ma to -100 a on page 26 4. modify test conditions illustration on page 27. 5. update hardware reset (reset#) table and figure 1. ac waveforms for reset# on page 28 6. update table 13. write (erase/program) operations on page 31. 7. update table 14. write (erase/program) operations on page 32 8. update figure 4. ac waveforms for chip/sector erase operations timings on page 34 9. update figure 8. alternate ce# controlled write operation timings on page 37 10. modify storage temperature from "-65 to + 125" to "-65 to +150" on page 41. 11. modify p = pb free to p = rohs compliant on page 42. 12. remove the latch up characteristics table from version g. 2009/4/20 i 1. correct the typo of v ih (max.) = vcc + 0.3v on page 26. 2. add bga package capacitance on page 33. 2011/10/26

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